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Aluminum Nitride Sheet
Thermal Conductivity : 170-180 W/m.K
Density : 3.30 g/cm3
Color : Grey & Dark Grey
Max. Working Temperature : 1,500 degree C
Application : Chip Resistor, Power Modules, LED packages, General isolator
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Product Introduction
Aluminum nitride ceramic is material with extremely strong ionic or covalent bonds and has excellent comprehensive properties. Aluminum nitride sheet is commonly used substrate materials in electronic packaging. They have high insulation properties and excellent high-frequency characteristics. At the same time, the coefficient of linear expansion is very similar to the electronic components, the chemical properties are very stable and the thermal conductivity is high. From 1985 to 1988, the application of aluminum nitride in microelectronic encapsulation materials emerged. In the past, alumina and beryllium oxide ceramics have been used as substrate materials for most high-power hybrid integrated circuits for a long time, but the basic thermal conductivity of alumina is low, and the thermal expansion coefficient does not match that of silicon. Although beryllium oxide has excellent overall performance, its high production cost and high toxicity shortcomings limit its application and promotion. Therefore, considering factors such as performance, cost, and environmental protection, the two can no longer fully meet the needs of the development of modern electronic power devices, in this case, aluminum nitride ceramic sheets have become more and more popular.
Popular Features
√ fast delivery | √ low thermal expansion | √ high thermal conductivity | √ high working temperature |
√ good metalization capacity | √ excellent electrical insulation | √ CTE close to that of Silicon (Si) | √ corrosion and erosion resistant |
SGS Report (AlN Sheet)
Test Item | Test Method | Test Condition | Test Result |
Bulk Density | Refer to ISO 10545-3:2018 | 50mm×50mm×0.5mm, 4pcs | Average: 3.34 g/cm3 |
Coefficient of Linear Expansion | Refer to ASTM D4535-13ɛ1 | 50mm×10mm×0.5mm, 3pcs Temperature: range from room temp. to 100°C. |
Average: 3.4×10-6/°C |
Thermal Conductivity | ISO 22007-2(2015) | 100mm×100mm×0.5mm, 2pcs Test conditioning: (25±2) °C, (50±10)%RH Sensor Type: C4922 (radius 14.61mm) Heating Power: 2.5 W Measurement Time: 2 sec. Test Temperature: (23±2)°C | 185.6 W/m‧K |
Flexural Strength | Refer to GB/T 9341-2008 and client requirement | 50mm×4.02mm×0.5mm Testing speed: 0.5mm/min Span: 30mm | 471 MPa |
Dielectric Breakdown Voltage | GB/T 1408.1-2016 Short-time (Rapid-rise) Test | 100mm×100mm×1.0mm, 5pcs Precondition: 23±2°C, 50±5%RH, 48h Test temperature: 23±2°C Lower electrode diameter: 75 mm Upper electrode diameter: 25 mm Frequency of voltage application: 50Hz Rate-of-rise: 1000V/s | 18.26 KV |
Dielectric Strength | GB/T 1408.1-2016 Short-time (Rapid-rise) Test | 100mm×100mm×1.0mm, 5pcs Precondition: 23±2°C, 50±5%RH, 48h Test temperature: 23±2°C Lower electrode diameter: 75 mm Upper electrode diameter: 25 mm Frequency of voltage application: 50Hz Rate-of-rise: 1000V/s | 17.73 KV/mm |
Volume Resistivity | GB/T 1410-2006 | 100mm×100mm×0.5mm; 5pcs Precondition: 23±2°C, 50±5%RH, 48h Test condition: 23±2°C, 50±5%RH Test electrode diameter: 50 mm Gap width: 10.0 mm Test voltage: 500 Vdc Electrification time: 1 min | 2.75×1014 Ω·cm |
Note: thermal conductivity was carried out by SGS Taiwan Ltd. ; flexural strength, dielectric breakdown voltage, dielectric strength, volume resistivity were carried out by SGS- CSTC Standards Technical Services Co., Ltd. Guangzhou Branch.
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