Silicon Nitride Substrate

Silicon Nitride Substrate by UNIPRETEC is made of Si3N4 ceramic. In order to reduce environmental pollution and create a green economy, efficient use of electricity has become more and more important, which also puts forward higher requirements for heat dissipation substrates in electronic devices. The disadvantages of traditional ceramic substrates such as AlN, Al2O3, and BeO of which increasingly prominent, such as lower theoretical thermal conductivity and poor mechanical properties, have seriously hindered its development. Compared with traditional ceramic substrate materials, silicon nitride ceramic has gradually become the new advanced heat dissipation material choice for electronic devices due to its excellent theoretical thermal conductivity and good mechanical properties.

However, the actual thermal conductivity of Si3N4 plate is far lower than the theoretical thermal conductivity, and some high thermal conductive silicon nitride ceramic substrates (>150 W/m·K) are still in the laboratory stage. The factors that affect the thermal conductivity of silicon nitride ceramics include lattice oxygen, crystal phase, and grain boundaries. In addition, the crystal type transformation and crystal axis orientation can also affect the thermal conductivity of silicon nitride to a certain extent. How to achieve mass production of Si3N4 ceramic substrate is also a big problem.

Technical Data Sheet

∆ The above data is offered for reference and comparison only, exact data will vary depending on manufacturing method and part configuration.

In order to solve these problems, UNIPRETEC has been committed to the continuous optimization of related preparation processes, and the actual thermal conductivity of silicon nitride plate is also continuously improving. In order to reduce the oxygen content of the lattice, firstly reduce the oxygen content in the selection of raw materials. On the one hand, Si powder with relatively small oxygen content can be used as the starting material. Thirdly, choosing appropriate sintering aids can also increase the thermal conductivity by reducing the oxygen content. In addition, by adding seed crystals and increasing the sintering temperature to promote the crystal form transformation, and by applying a magnetic field to make the grains grow directional, the thermal conductivity can be improved to a certain extent. In order to meet the size requirements of electronic devices, UNIPRETEC uses a tape casting process to prepare silicon nitride sheet, wafer, substrate.

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